Self-consistent modeling of microwave activated N-2/CH4/H-2 (and N-2/H-2) plasmas relevant to diamond chemical vapor deposition

The growth rate of diamond by chemical vapor deposition (CVD) from microwave (MW) plasma activated CH4/H-2 gas mixtures can be significantly enhanced by adding trace quantities of N-2 to the process gas mixture. Reasons for this increase remain unclear. The present article reports new, self-consistent two-dimensional modeling of MW activated N-2/H-2 and N-2/CH4/H-2 plasmas operating at pressures and powers relevant to contemporary diamond CVD, the results of which are compared and tensioned against available experimental data. The enhanced N/C/H plasma chemical modeling reveals the very limited reactivity of N-2 under typical processing conditions and the dominance of N atoms among the dilute 'soup' of potentially reactive N-containing species incident on the growing diamond surface. Ways in which these various N-containing species may enhance growth rates are also discussed.