Watt-class, semi-polar oriented, violet, edge-emitting laser diodes

We report on state-of-the-art performance in violet, multi-mode, edge-emitting laser diodes fabricated on semi-polar oriented GaN substrates. Using these novel crystal orientations, we demonstrate high-power and high-efficiency continuous-wave laser operation. We report on violet laser diodes achieving continuous-wave output powers with peak wall-plug-efficiencies above 40% and optical output powers above 5 W at wavelengths between ~405 and ~415 nm. To the best of the author's knowledge, these wall-plug-efficiencies represents the highest reported to date for a multi-mode GaN diode laser emitting in the range of 400-410 nm. These InGaN-based laser-diodes will offer dramatic improvements in performance, size, weight, and cost of conventional solid-state and gas-based violet laser sources for use in defense, medical, and materials processing applications.