Theoretical Study of a 1.94 THz RTD-gHEMT Oscillator Towards THz Communications

Suitable power levels remain constant challenges in terahertz (THz) communications. This work analytically investigates a 1.94 THz resonant tunneling diode-gated high-electron mobility transistor (RTD-gHEMT)-based oscillator along with a graphene antenna for future 6G wireless networks. We obtain the negative conductance of a distributed circuit model from experimental results of an InGaAs/AlAs RTD oscillator. Analytical results show the device notably achieves an output power up to 14 mW (similar to 11.5 dBm) whilst operating at frequencies as high as 1.94 THz. Furthermore, the RTD-gHEMT device has a 37.4 nm gate length, which renders a substantial decrease in the system form factor. These unique features place the device as part of potential solutions for generation and transmission of THz signals in 6G networks.