Etching kinetics and dielectric properties of SiOC films exposed to Ar and CF4 plasmas

Younghun Oh,Alexander Efremov,Junmyung Lee,Jongchan Lee,Yeonsik Choi,Kwang-Ho Kwon

Thin Solid Films（2022）

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摘要

•To isolate the effect of each plasma species, we used several optical masks.•investigate both etching kinetics and plasma-induced damage.•CF4 plasma produces lower degradation of dielectric constant compared with Ar plasma.

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关键词

SiOC,Plasma parameters,Ion flux,Radical flux,Etching,Damage,Dielectric constant,Ion bombardment,UV radiation

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