The effect of gamma-ray irradiation on the electrical characteristics of sol-gel derived zinc tin oxide thin film transistors

•The effect of gamma-ray irradiation has been studied on sol-gel derived ZTO TFTs.•VT shifted negative for 10 MRad dose, but shifted positive for 50 MRad and 100 MRad.•ID slightly increased at 10 MRad, but reduced at further higher doses of irradiation.•Field effect mobility degraded slightly as the irradiation dose increased.•The subthreshold swing and interfacial defects increased with increasing the dose.•The ZTO TFT with a moderate degradation makes it a radiation-hard device.