Impact of Gamma Radiations on Static, Pulsed I–V , and RF Performance Parameters of AlGaN/GaN HEMT

Ajay Kumar Visvkarma,Khushwant Sehra, Chanchal,Robert Laishram,Amit Malik,Sunil Sharma,Sudhir Kumar,D. S. Rawal,Seema Vinayak,Manoj Saxena

IEEE Transactions on Electron Devices（2022）

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摘要

In this article, the impact of gamma ( $\gamma $ ) irradiation on passivated and unpassivated AlGaN/GaN HEMT is presented in detail. Passivated and unpassivated GaN-HEMT devices have been exposed to $\gamma $ -radiations to a total dose of 10 kGy. Post-更多

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关键词

HEMTs,Radiation effects,Logic gates,Wide band gap semiconductors,Aluminum gallium nitride,Performance evaluation,Radio frequency

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