Investigation of Peculiarities of Coherent Magnetotransport of InN Nanowires Using Scanning Gate Microscopy

We present measurements of magnetotransport in InN nanowires in presence of a conductive atomic-force microscope probe at a temperature of T = 4.2 K. Potential barriers at a metal-semiconductor interface are visualized for high quality nanowires. In lower quality wires scanning gate microscopy (SGM) mapping reveals inhomogeneities in the sample with lateral scales of around 200 nm. The influence of an external magnetic field on the results of the potential barrier SGM mapping are investigated in detail. Additionally, oscillations of magnetoresistance in high-quality InN nanowires are observed. Their rigidity and level of visualization against local and non-local variations of carrier density are investigated. The influence of the external magnetic field and carrier density on visualization of resonant scatters in SGM scans is discussed as well.