Application of the Scattering Matrix Method for Calculation of Impurity States in Semiconductor Structures

The scattering matrix method is adapted for calculation of energy levels and charge carrier wavefunctions near impurity-defect centers. The possibility of application of this method for multiband models is exemplified by the Luttinger Hamiltonian with a Coulomb acceptor with the spherical symmetry approach. The obtained values of energy of discrete levels are in good agreement with the results of calculations performed by other methods.