SnO/beta-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes

In this work, we report on the realization of SnO/beta-Ga2O3 heterojunction vertical diodes and lateral field-effect transistors for power electronic applications. The p-type semiconductor SnO is grown by plasma-assisted molecular beam epitaxy on n-type (100) beta-Ga2O3 with donor concentrations of 3 x 10(17) cm(-3) for the diode devices and 8.1 x 10(17) cm(-3) for the field-effect transistors. The deposited films show a predominant SnO (001) phase featuring a hole concentration and a mobility of 7.2 x 10(18) cm(-3) and 1.5 cm(2)/V s, respectively. The subsequent electrical characterization of the heterojunction diodes and field-effect transistors show stable switching properties with on/off current ratios > 10(6) and specific on-resistances below 4 m omega cm(2). Furthermore, breakdown measurements in air of the non-field-plated heterojunction transistor with a gate-to-drain distance of 4 mu m yield a breakdown voltage of 750 V, which equals an average breakdown strength of nearly 1.9 MV/cm. The resulting power figure of merit is calculated to 178 MW/cm(2) demonstrating state-of-the-art properties. This emphasizes the high potential of this heterojunction approach.& nbsp;(C) 2022 Author(s).