Growth of III-V Antimonide Heterostructure Nanowires on Silicon Substrate for Esaki Tunnel Diode

Integration of low bandgap antimonide based nanowires on Si substrate has been attracting huge attention for opto-electronic applications. In this work we demonstrated InAs/InSb and InAs/GaSb heterostructure nanowires on Si substrate by metal organic chemical vapor deposition. We grew high quality axial InSb heterostructure segment on InAs stem by self-catalyzed growth technique, which paves a way to tune the crystal structure of InSb. In case of InAs-GaSb core-shell architecture, GaSb crystal quality highly depends on InAs core. We successfully demonstrated basic electrical characteristics of InAs-GaSb core-shell nanowire which exhibits negative differential resistance at 0.8 V and peak-to-valley current ratio of 3.84.