Effect of unintentional nitrogen incorporation on n-type doping of β-Ga₂O₃ grown by molecular beam epitaxy

Jiaqi Wei,Fang Liu,Xin Rong,Tao Wang,Liuyun Yang,Renchun Tao,Jing Yang,Liwei Guo,Bo Shen,Xinqiang Wang

CrystEngComm（2022）

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摘要

The effect of unintentional nitrogen incorporation on n-type doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy was demonstrated.

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Effect of unintentional nitrogen incorporation on n-type doping of β-Ga2O3 grown by molecular beam epitaxy

Effect of unintentional nitrogen incorporation on n-type doping of β-Ga₂O₃ grown by molecular beam epitaxy