Effect of Strain on the Epitaxy of B-Doped Si0.5Ge0.5 Source/Drain LayersGianluca Rengo,Clement Porret,Andriy Yakovitch Hikavyy,Erik Rosseel,Mustafa Ayyad,Richard J. H. Morris,Geoffrey Pourtois,Roger Loo,Andre VantommeECS Meeting Abstracts(2021)引用 0|浏览4暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要