Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies.

A systematic study of the time-dependent dielectric breakdown of 3D ferroelectric (FE) and antiferroelectric (AFE) Si:HfO2 capacitors is reported. The voltage and temperature acceleration of characteristic breakdown time is studied. The 10 year lifetime extrapolation is projected to be 2.3 MV/cm and 2.7 MV/cm for 20 nm FE and AFE devices respectively. Further, 10 nm AFE devices had projected lifetime at 2.5 MV/cm at 100 degrees C. The effect of the polarization measurements on the TDDB is studied and the impact to the lifetime extrapolation was found to be neglectable.