Design of novel p–n heterojunction ZnBi 2 O 4 -ZnS photocatalysts with impressive photocatalytic and antibacterial activities under visible light

Heterojunction structures have attracted considerable attention for enhancing electron migration across interfaces. In this report, ZnBi 2 O 4 –ZnS(12%) heterojunction photocatalysts was found to be capable of degrading over 94% of indigo carmine in a 15 mg/L solution within 90 min of visible light irradiation at a catalytic dose of 1.0 g/L and pH 4. Furthermore, more than 82% of the total organic carbon (TOC) was removed, confirming the almost complete mineralization of the indigo carmine by ZnBi 2 O 4 –ZnS(12%). Moreover, the photocatalyst exhibited high stability and retained its photocatalytic activity up to the 5th cycle of operation without photocorrosion. The dramatic enhancement in the visible-light photocatalytic performance of the ZnBi 2 O 4 –ZnS heterojunctions over pristine ZnBi 2 O 4 and ZnS was due to the formation of a superior heterojunction between the n-type semiconductor, ZnS, and the p-type semiconductor, ZnBi 2 O 4 . This heterojunction facilitated the separation and transfer of the photoinduced electron at the interfaces of the two semiconductors. Furthermore, the ZnBi 2 O 4 –ZnS(12%) exhibited an inhibition zone of 15 mm against fecal Escherichia coli (ATCC 8739), with a minimum inhibitory concentration (MIC) of 150 μg/mL. These results demonstrated that the novel ZnBi 2 O 4 –ZnS p–n-type heterojunction is a promising visible-light active photo-catalyst for the degradation of organic pollutants and inhibition of fecal E. coli .