Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN

Thermal sublimation, a specific method to fabricate semiconductor nanowires, is an effective way to understand growth behavior as well. Utilizing a high-resolution transmission electron microscope (TEM) with in situ heating capability, the lattice-asymmetry-driven anisotropic sublimation behavior is demonstrated of wurtzite GaN: sublimation preferentially occurs along the [0001 over bar $000\bar{1}$] and [0001] directions in both GaN thin films and nanowires. Hexagonal pyramidal nanostructures consisting of six semipolar {11 over bar 01}$\{ {1\bar{1}01} \}$ planes and one (0001 over bar $\bar{1}$) plane with the apex pointing to the [0001] direction are generated as a sublimation-induced equilibrium crystal structure, which is consistent with the lattice-asymmetry-driven growth behaviors in wurtzite GaN. These findings offer a new insight into the thermal stability of wurtzite GaN and provide essential background for tailoring the structure of III-nitrides for atomic-scale manufacturing.