Approaching the Limits of Aspect Ratio in Free‐Standing Al2O3 3D Shell Structures

Nanoscale free-standing membranes are used for a variety of sensors and other micro/nano-electro-mechanical systems devices. To tune performance, it is indispensable to understand the limits of aspect ratios achievable. Herein, vapor hydrofluoric (VHF) processes are employed to release 3D shell structures made of atomic-layer-deposited Al2O3 etch-stop layers. Structure heights of 100-600 nm and widths of 1-200 nm are fabricated for membranes with 20 and 50 nm thickness. Undercut depths of 500 mu m and aspect ratios of 475:1 etch depth to structure width (50 nm films) and etch depth to membrane thicknesses of 495:0.02 (20 nm films) are achieved. The etch-rate stagnates above a ratio of 31% hydrofluoric (HF), where decreasing EtOH shares reduce reproducibility. Etch rates reach 0.75 mm min(-1) and are generally constant over vapor etch depth. For 100 nm heights and widths of 2 mu m , etch rates however stagnate for deeper depths. All explored structures remained stable with widths up to 5 mu m independent of the height. Above 10 mu m width, top membranes deflect, likely from stress accumulated during deposition. Herein, exploring and understanding the limits of aspect ratio in future free-standing membrane devices are helped.