Research on p-on-n LWIR and VLWIR HgCdTe infrared focal plane detectors technology

The p-on-n structure doped with As implantation has the advantages of low dark current,high R(0)A product, and long minority carrier lifetime,which is an important trend in the development of long-wavelength and very long-wavelength HgCdTe infrared focal plane detectors. P-on-n LWIR and VLWIR HgCdTe infrared focal plane detectors with cut-off wavelength of 9. 5 mu m and 10. 1 mu m at 77 K and 14. 97 mu m at 71 K fabricated by Kunming Institute of Physics are introduced. Test and analyze performance parameters such as the responsivity,NETD,dark current and R(0)A of the detectors. The test results show that the operability of the detectors is between 99. 78% and 99. 9%,and the NETD of the detectors is less than 21 mK. The effective fabrication of p-on-n LWIR and VLWIR HgCdTe infrared focal plane detectors is realized.