Hole capture cross section of the Al acceptor level in 4H-SiC
MATERIALS TODAY COMMUNICATIONS(2022)
摘要
We performed current deep level transient spectroscopy (I-DLTS) on Al-doped p-type 4H-SiC epilayers. The epilayers exhibited a peak at 100-120 K in the I-DLTS spectra. The correspondence of the deep-level concen-trations with the net acceptor concentration implies that the peak originates from the Al acceptor level. The observed activation energy of the peak was low compared to the Al acceptor level reported by Hall measurements owing to the Poole-Frenkel effect. We estimated capture cross section sigma for holes of the Al acceptor level at the peak temperature based on the I-DLTS peak height dependence on the injection pulse widths and analyzed the temperature dependence of sigma for holes.
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关键词
Silicon carbide, Deep level, Al, Capture cross section
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