Impact of OFF-State, HCI and BTI Degradation in FDSOI Ω-gate NW-FETs
Solid-state electronics(2022)
摘要
In this work, the degradation of N-type FDSOI Ω-gate NW-FETs caused by OFF-State stress under different conditions has been experimentally studied and compared with the effects of positive/negative BTI and HCI aging. The experimental observations show that, in these devices, HCI and OFF-State are the most damaging aging mechanisms while N/PBTI stresses produce negligible degradation. Moreover, for large enough stress conditions, OFF-State aging introduces large leakage currents, largely distorting the ID-VG curves of the transistor.
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关键词
Aging,FD-SOI,BTI,HCI OFF-State,Stress,NW-FETs,Reliability
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