Visualization of bandgap energy fluctuation in InGaN quantum wells

Materials Letters(2022)

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摘要
•Cathodoluminescence-TEM (TEM-CL) technique was used to analyze light emission from InGaN multi-quantum well structure.•Panchromatic and hyper-spectral image analysis show that light emissions from the InGaN active layers are not homogeneous.•Band-gap energy plot visualizes the energy hump regions where the carriers are preferentially localized.
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关键词
InGaN,Multi-quantum well,Bandgap energy,Transmission electron microscopy
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