Probing Nanoscale Schottky Barrier Characteristics at WSe ₂ /Graphene Heterostructures via Electrostatic Doping (Adv. Electron. Mater. 9/2022)

Nanoscale Schottky Barrier Characteristics The local Schottky–Mott characteristics determine the quality of electronic interfaces in metal–semiconductor van der Waals heterostructures. In the article number 2200196, Sebastian Wood and co-workers demonstrate how advanced scanning probe microscopy can probe the interface characteristics of monolayer tungsten diselenide on graphene transistors, distinguishing contributions from interface dipoles and graphene work function, and providing evidence for unpinned Fermi levels through electrostatic doping.