Intrinsic properties of metallic edge states in MoS 2 nanobelt

Low-dimensional transition metal dichalcogenides (TMDs) represented by MoS 2 have attracted attraction due to their unique structural, physical, and chemical properties. In this work, one-dimensional (1D) MoS 2 nanobelts were firstly synthesized on SiO 2 /Si substrate via chemical vapor deposition (CVD) method. The base planes of MoS 2 nanobelt vertically stand on the substrate, which makes the layer edges form the top surface of the nanobelt. By using the micro- and nanoscale fabrication processing, we fabricated field-effect transistor (FET) based on MoS 2 nanobelt. The transfer characteristics of the top-gated device indicates that gate modulation in the MoS 2 edges is negligible, and the MoS 2 edges are found to be a hole metal with the mobility of ~ 0.0023 m 2 /V·s. The device with zero gate voltage exhibits the carrier concentration of ~ 3.20 × 10 13 cm − 2 and resistivity of ~ 8.59 × 10 4 Ω. The results firstly demonstrate the intrinsic transport properties of metallic edge states in MoS 2 nanobelts, which might facilitate the application of MoS 2 metallic edges in other aspects in the future.