Effects of Gate Metal and Channel Shape on the Variability of Junctionless Field-Effect Transistor

Xinhe Wang,Feng Xu,Zhigang Zhang,Xinyi Li,Jianshi Tang,Bin Gao,Huaqiang Wu,He Qian

2022 China Semiconductor Technology International Conference (CSTIC)（2022）

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摘要

This work comprehensively investigates the influence of gate metal work function and its grain size variations as well as channel shape on the electrical characteristics of junctionless field-effect transistors (FETs) through 3D TCAD simulations. It is found that, for a certain gate length, the smaller the gate metal grain size, the more compact the distribution of the threshold voltage. Two different channel shapes concerning ellipse and cuboid are further analyzed.

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关键词

junctionless field-effect transistor,gate length,gate metal grain size,channel shapes,gate metal work function,grain size variations,gate metal effects,electrical characteristics,FETs,3D TCAD simulations,threshold voltage distribution

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