An ion beam spot size monitor based on a nano-machined Si photodiode probed by means of the ion beam induced charge technique

In this work the utilization of the Ion Beam Induced Charge (IBIC) technique is explored to assess the resolution a 2 MeV Li + ion microbeam raster scanning a micrometer-sized FIB-machined hollows in a silicon photodiode. The analysis of the maps crossing the FIB machined structures evidenced a drop in charge collection efficiency across the perimeter of the hollows combined with a significant recovery of the signal amplitude at the center of the microstructures, thus forming a micrometer-sized feature which can be exploited to estimate the resolution of the probing beam. The results were interpreted according to numerical simulations based on the Shockley-Ramo-Gunn as originating from a FIB-induced surface space charge density.