Nonvolatile High-Contrast Whole Long-Wave Infrared Emissivity Switching Based on In3SbTe2

Switchable thermal emission in the long-wave infrared (LWIR, 8-14 mu m) range is of great significance in applications like thermal detection, radiative cooling, and infrared camouflage. Existing methods for switchable LWIR emission apply photonic structures incorporating smart materials, which either require a continuous input power or produce limited emissivity contrasts. In this study, two nonvolatile high-contrast switchable emitters over the whole LWIR range have been proposed utilizing the drastic permittivity change of In3SbTe2 (IST) upon crystallization. One switchable emitter exhibits negative differential emissivity (& UDelta;8N,8-14 mu m & AP; -0.75, emissivity decreases with temperature) and is experimentally applied to infrared camouflage; the other shows positive differential emissivity (& UDelta;8P,8-14 mu m & AP; 0.83, emissivity increases with temperature) and demonstrates its capability in thermal management. The demonstrated characteristics of IST provide a new route for realizing differential emissivity and make the IST-based emitters highly promising for applications such as infrared camouflage and thermal management.