CMOS-compatible direct laser writing of sulfur-ultrahyperdoped silicon: Breakthrough pre-requisite for UV-THz optoelectronic nano/microintegration

Sergey Kudryashov,Alena Nastulyavichus,George Krasin,Kamil Khamidullin,Kirill Boldyrev,Demid Kirilenko, Alexander Yachmenev,Dmitry Ponomarev,Gennady Komandin,Sergey Lebedev, Dmitry Prikhod'ko,Michael Kovalev

Optics & Laser Technology（2023）

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摘要

•Si-based broadband (UV-THz) n-p junction detector was written as a n-type sulfur-ultrahyperdoped Si sub-micron-thick layer on a p-doped Si-substrate.•Near-far IR (2–40 μm) temperature-dependent photoconductivity was revealed in the biased n-p junction.•In the range of 77–300 K THz-spectroscopy indicates the Drudelike conduction-band response of electrons and their gradually raising density.

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关键词

Silicon,Direct laser writing,Ultra-hyperdoping,Donor sulfur impurity centers and states,Intermediate donor band,n-p junction,Near-far IR and THz spectral response,Photoconductivity,Thermal ionization,Spectral migration,Optoelectronic applications

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