Chrome Extension
WeChat Mini Program
Use on ChatGLM

Examination of Trapping Effects on Single-Event Transients in GaN HEMTs

IEEE transactions on nuclear science(2023)

Cited 1|Views43
No score
Key words
MODFETs,HEMTs,Semiconductor process modeling,Computational modeling,Wide band gap semiconductors,Transient analysis,Logic gates,Aluminum gallium nitride (AlGaN),gallium nitride (GaN),high-electron-mobility transistors (HEMTs),radiation effects,single-event transients (SETs),technology computer-aided design (TCAD)
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined