Examination of Trapping Effects on Single-Event Transients in GaN HEMTs
IEEE transactions on nuclear science(2023)
Key words
MODFETs,HEMTs,Semiconductor process modeling,Computational modeling,Wide band gap semiconductors,Transient analysis,Logic gates,Aluminum gallium nitride (AlGaN),gallium nitride (GaN),high-electron-mobility transistors (HEMTs),radiation effects,single-event transients (SETs),technology computer-aided design (TCAD)
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