Nitrogen Donor in Silicon: Towards Room Temperature Operation of Single Electron Tunneling Devices

Dopant atom-based transistors are capable of being used as a basic element in quantum computing architecture. Single electron tunneling effects are exploited and utilized in these devices. Due to shallow dopants doping in existing silicon-based transistors, the room temperature operation is difficult for these devices. As an alternative, we substitutionally doped nitrogen donor instead of phosphorous and calculated the TDOS and $\mathrm{I}_{\mathrm{D}}-\mathrm{V}_{\mathrm{G}}$ characteristics of the device. The results confirm that the nitrogen donor is suitable for room temperature operation of single electron tunneling devices.