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Demonstration of Various H-Bn Based Diodes with TCAD Simulation

2022 Compound Semiconductor Week (CSW)(2022)

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摘要
Hexagonal boron nitride (h-BN), a material currently unavailable in the material library of TCAD Silvaco, is manually defined in Silvaco Atlas with the physics properties previously reported. Two h-BN/GaN p-n diodes and a lateral h-BN Schottky barrier diode are simulated, and their thermal and electrical characteristics at forward bias are investigated, which gives a preliminary forecast of the future h-BN electronics devices.
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关键词
h-BN,GaN,lateral p-n diodes,schottky barrier diode
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