MOSFET/TFET Mixed Power Clamp Circuit For ESD and Surge Protection

In this paper, a high sensitive voltage detector is proposed and its electrical characteristics are investigated using technology computer-aided design (TCAD) simulation. Germanium (Ge) source and line configuration TFET is adopted to obtain an ultra sensitive detection capability. Corresponding operating principle is explained and the impact of the key parameters on the voltage detector is also discussed. The simulation results show that the new proposed Ge source line TFET based voltage detector has a low leakage current and high detection sensitivity under the electrostatic discharge (ESD) and surge events compared to traditional detectors.