Coupling a phase field model with an electro-thermal solver to simulate PCM intermediate resistance states for neuromorphic computing
Solid-State Electronics(2023)
摘要
A key attribute for Phase-Change Memories to be used for neuromorphic computing is the possibility to create intermediate resistance states by the progressive crystallization during the successive application of set pulses. To complete an experimental approach, we studied progressive crystallization by simulation. Insight on the real mechanisms of progressive crystallization is obtained by coupling Joule heating, diffusion of heat and a phase change model relying on the Phase Field Method.
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关键词
Neuromorphic computing,PCM,Resistance states,Progressive crystallization,Simulation,Phase field model
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