Floating Particles in the Melt during the Growth of β-Ga₂O₃ Single Crystals Using the Czochralski Method

Floating particles often appear during the Czochralski (CZ) growth of β-Ga2O3 in the Ir crucible, thereby impeding the seeding process. Identifying the floating nanoparticles and then inhibiting or removing them is critical for growing high-quality β-Ga2O3 single crystals. We grew β-Ga2O3 crystals containing floating particles using the CZ method. It is indicated that the floating particles were composed of Ir with a face-centered cubic (fcc) structure. In addition, the β-Ga2O3/Ir interface was comprehensively characterized, showing sharp and straight configuration on the whole with small fluctuations at the nanoscale. Combined with density functional theory (DFT) calculation, we found that Ir-O bonding was responsible for stabilizing the interface. Accordingly, the atomic configuration of the interface with the stablest structure, including the relaxed one, was determined. Based on the formation mechanism of the floating particles, we propose three effective strategies, including blowing sufficient oxygen into the bottom of the Ir crucible, coating a protective layer on its inwall and equipping a mechanical arm for inhibiting or removing them.