Effect of Schottky annealing temperature on reverse leakage current of 6500 V 4H-SiC JBS diodes

Xiping Niu,Xiaoguang Wei,Yunlai An,Ling Sang,Peifei Wu,Yang Zhou, Botao Sun,Wenting Zhang,Rui Liu,Zechen Du,Chenmeng Li,Zhanwei Shen,Tongtong Yang,Weixia Luo, Yan Tian,Fei Yang

Journal of Crystal Growth（2023）

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摘要

•The Reverse leakage current of 6500 V 4H-SiC JBS diodes was studied.•The Schottky barrier height of 6500 V 4H-SiC JBS diodes was studied.•The relationship between Schottky barrier and reverse leakage current is analyzed and attained.•The decrease of Schottky barrier leads to the increase of the reverse leakage current.

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关键词

A1. 4H-SiC,A2. JBS,A3. Diodes,B1. Temperature,B2. Schottky Barrier,B3. Reverse Leakage Current

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