Performance improvement of a tunnel junction memristor with amorphous insulator film

This study theoretically demonstrated the oxygen vacancy ( V O 2+ )-based modulation of a tunneling junction memristor (TJM) with a high and tunable tunneling electroresistance (TER) ratio. The tunneling barrier height and width are modulated by the V O 2+ -related dipoles, and the ON and OFF-state of the device are achieved by the accumulation of V O 2+ and negative charges near the semiconductor electrode, respectively. Furthemore, the TER ratio of TJMs can be tuned by varying the density of the ion dipoles ( N dipole ), thicknesses of ferroelectric-like film ( T FE ) and SiO 2 ( T ox ), doping concentration ( N d ) of the semiconductor electrode, and the workfunction of the top electrode (TE). An optimized TER ratio can be achieved with high oxygen vacancy density, relatively thick T FE , thin T ox , small N d , and moderate TE workfunction.