All Solution-Processed Hafnium Rich Hybrid Dielectrics for Hysteresis Free Metal-Oxide Thin-Film Transistors

J. Meza Arroyo,M. G. Syamala Rao,M. S. de Urquijo Ventura,V. H. Martinez-Landeros,Trey B. B. Daunis,Ovidio Rodriguez,Julia W. P. Hsu,R. Ramirez Bon

Journal of materials chemistry C（2023）

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摘要

We fabricated all solution based In2O3 TFTs with AlOx–PVP and HfAlOx–PVP hybrid dielectric layers and observed the reduction of hysteresis by incorporation of HfOx into the pristine AlOx–PVP hybrid dielectric with enhanced electrical performance.

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