Investigation of electrical characterization of Al/HfO 2 /p-Si structures in wide temperature range

We studied the I – V characteristics of Al/HfO 2 /p-Si structure investigated in a wide temperature range of 80–400 K. The zero-bias barrier height ( Φ B ) and ideality factor ( n ) values were calculated for the structure using thermionic emission theory, and it was observed that the values ranged between 3.88 and 0.28 eV at 80 K and 2.81 and 0.90 eV at 400 K, respectively. T 0 effect value was calculated from straight line fitted to nT – T plot. The fit to the experimental value of nT – T plot was parallel to the ideal Schottky contact line. T 0 effect value of structure was found as 145.34 K. The series resistance values decreasing with increasing temperature were calculated 888.76 Ω at 80 K at 5 V and 122.10 Ω at 400 K at 5 V. In addition, the energy distribution of interface state density profiles was obtained by considering the effective barrier height depending on the temperature ( Φ e ) and the voltage dependence of the ideality factor [ n ( V )].