Bi 2 Te 3 Thin Films Deposited by the Combination of Bi and Te Plasmas in a PLD Process.

Bismuth telluride thin films were grown by pulsed laser deposition by implementing a novel method that combines both Te and Bi plasmas resulting from the laser ablation of individual Bi and Te targets. Furthermore, the mean kinetic ion energy and density of the plasmas, as estimated by TOF curves obtained from Langmuir probe measurements, were used as control parameters for the deposition process. The obtained thin films exhibit a metallic mirror-like appearance and present good adhesion to the substrate. Morphology of the thin films was observed by SEM, yielding smooth surfaces where particulates were also observed (splashing). Chemical composition analysis obtained by EDS showed that apparently the films have a Te-rich composition (ratio of Te/Bi of 3); however, Te excess arises from the splashing as revealed by the structural characterization (XRD and Raman spectroscopy). The XRD pattern indicated that depositions have the rhombohedral (D3d5 (R3¯m)) structure of BiTe. Likewise, Raman spectra exhibited the presence of signals that correspond to Eg2, A1u2 and A1g2(LO) vibrational modes of the same rhombohedral phase of BiTe. Additionally, oxidation states, analyzed by XPS, resulted in signals associated to Bi and Te that correspond to the BiTe compound. Finally, surface topology and thickness profiles were obtained from AFM measurements, confirming a combination of a smooth surface with particulates on top of it and a film thickness of 400 nm.