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Characterization of the Slow-State Traps in 4h–sic P-type MOS Capacitor by a Preconditioning Technique with High Positive Voltage Stress

Kanghua Yu,Yifan Liu,Wenhao Zhang,Haonan Chen,Chengzhan Li,Jieqin Ding,Jun Wang,Dongyuan Zhai,Yuwei Wang

MICRO AND NANOSTRUCTURES（2023）

Cited 0|Views22
Key words
4H-SiC,P-type MOS capacitor,Slow-state traps,Trap measurement,Stress preconditioning
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