Influence of H2 treatment on the surface morphology of SiC with different wafer orientation and doping

•H2-etched SiC with different wafer orientation and doping are analyzed in detail.•Si-face 4° off-cut wafer boasts obvious terrace step after 1650 °C H2 treatment.•∼ 15 % to ∼ 51 % decrement in roughness is realized in C-face 4° off-cut substrate.•Defective graphitic structure is identified after high temperature Ar treatment.