4H-SiC trench filling by chemical vapor deposition using trichlorosilane as Si-species precursor

•4H-SiC trench filling experiments were conducted by chemical vapor deposition with the gas system of TCS:C2H4:H2.•Using the optimized process, the 8 μm deep 4H-SiC trenches with an aspect ratio of 3, were completely filled at a filling rate of 2.8 μm/h and acquired a flat end surface without void defects.