Enhanced Electrical Characteristics of Zr/Diamond Schottky Barrier Diode with Cerium Hexaboride Interfacial Layer

Tian-Fei Zhu,Guoqing Shao,Tai Min,Hong-Xing Wang

Materials Letters（2023）

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摘要

•CeB6 interfacial layer enhances performance of Zr/Diamond SBD.•Improved ideality factor and Schottky barrier height.•Increased reverse breakdown voltage.•Suppressed reverse current and increased carrier concentration.

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关键词

Cerium hexaboride,Schottky barrier diode,Diamond,Interfacial layer,X-ray photoelectron spectroscopy

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