Giant Tunneling Magnetoresistance in Spin-Filter Magnetic Tunnel Junctions Based on van der Waals A-Type Antiferromagnet CrSBr

Two-dimensional van der Waals magnetic materials have demonstrated great potential for new-generation high-performance and versatile spintronic devices. Among them, magnetic tunnel junctions (MTJs) based on A-type antiferromagnets, such as CrI3, possess record-high tunneling magnetoresistance (TMR) because of the spin filter effect of each insulating unit ferromagnetic layer. However, the relatively low working temperature and the instability of the chromium halides hinder applications of this system. Using a different technical scheme, we fabricated the MTJs based on an air-stable A-type antiferromagnet, CrSBr, and observed a giant TMR of up to 47000% at 5 K. Meanwhile, because of a relatively high Neel temperature of CrSBr, a sizable TMR of about 50% was observed at 130 K, which makes a big step towards spintronic devices at room temperature. Our results reveal the potential of realizing magnetic information storage in CrSBr-based spin-filter MTJs.