Ballistic transport and surface scattering in (In,Ga)As-InP heterostructure narrow channels

Narrow conduction channels are fabricated from an In0.75Ga0.25As-InP heterostructure using electron-beam lithography and dry etching. The etched surface is realized to be smooth by employing a reactive ion etching. The etching-induced surface conduction is eliminated by removing the damaged surface layer using a diluted HCl solution. The negligible surface depletion for the In-rich quantum well enables to create conducting channels in arbitrary geometries such as in a circular shape. We evidence the presence of a ballistic contribution in the electron transport by demonstrating a rectification of rf excitations that is achieved by the magnetic-field-tuned transmission asymmetry in the circularly-shaped channels. The absence of the surface depletion is shown to cause, on the other hand, a surface scattering for the electrons confined in the channels. An increase of the resistance, including its anomalous enhancement at low temperatures, is induced by the gas molecules attached to the sidewalls of the channels. We also report a large persistent photoconduction, which occurs as a parallel conduction in the undoped InP barrier layer.