Analysis on Short-Term Degradation of Oxide Thin-Film Transistors and Degradation Modeling for Prediction

Gate bias stress can change the threshold voltage of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT). Especially, short-term degradation of threshold voltage should be compensated since it causes motion artifacts in the display. Therefore, a new short-term degradation model was proposed based on the stretched-exponential model. Moreover, the accuracy of the proposed model was confirmed by calculating the coefficient of determination between the measured data and the fitted data.