Preparation of AZO-based multilayer thin films with high comprehensive properties by introducing Cu/Ag bimetallic layers

Based on the design of the Cu/Ag bimetallic layer, Cu/Ag/AZO multilayer films were firstly prepared by radio frequency (RF) magnetron sputtering of Ag and Cu layers successively on AZO/glass substrates. The influences of Cu/Ag layer thickness ratio, deposition sequence, and annealing temperature on optical and electrical properties of the resulting films were investigated. The results revealed that the average transmittance and sheet resistance of the Cu/Ag/AZO multilayer films were decreased with decreasing Cu/Ag layer thickness ratio, and were unaffected by the Cu/Ag layer deposition sequence. Among these films, the Cu 4 /Ag 2 /AZO multilayer film with a 4 nm-thick Cu layer and a 2 nm-thick Ag layer possessed the highest figure of merit of 1.92 × 10 −2 Ω −1 . The optimal annealing temperature for this film was determined to be 400 °C, and the as-obtained film achieved a higher figure of merit of 3.22 × 10 −2 Ω −1 . Finally, an AZO/Cu 4 /Ag 2 /AZO multilayer film was prepared by sputtering a 150 nm-thick AZO layer and annealing under 400 °C, and exhibited the best comprehensive property with the highest figure of merit of 4.05 × 10 −2 Ω −1 . This work may have a certain inspiration and reference significance with regard to the preparation of transparent conductive thin films with high comprehensive properties.