The effect of gamma-ray irradiation on voltage-controlled magnetism of HfZrO/ CoFeB Hall bar device

We investigate the total ionizing dose (TID) effect on the voltage-controlled magnetic anisotropy (VCMA) Hall bar device based on HfZrO/CoFeB hybrid film. Devices under test are exposed to 1.17 MeV 60Co gamma-ray at the dose rate of 50 rad(Si)/s. The Anomalous Hall measurement is performed at several certain irradiation dosages. The results show that the VCMA effect is enhanced with the accumulation of irradiation dosage. We propose a mechanism of interface trapped charges to explain this phenomenon. Thus, our work indicates that the magnetic tunneling junction based on HfZrO/CoFeB hybrid film is a promising building block for radiation-hard VCMAMRAM (magneto-resistive random-access memory).