On the surface oxidation and band alignment of ferroelectric Sc0.18Al0.82N/ GaN heterostructures

Ferroelectric scandium aluminum nitride (ScAlN), owing to its unique properties and seamless integration with the mainstream GaN technology, has attracted considerable attention as one of the most promising materials for next-generation multifunctional electronics. To date, however, a detailed understanding of the fundamental surface properties and the band alignment of ScAlN/III-nitride heterostructure has remained elusive. In this work, with the use of high-resolution X-ray photoelectron spectroscopy measurements, we demonstrate the existence of a considerable oxidation layer on ScAlN when it is exposed to air, which shows a significant impact on the material characterization and electronic structure evaluation. By excluding the possible impact from the surface oxide layer, the band alignment of Sc0.18Al0.82N/GaN can be correctly determined. Simulation results further showed that the Sc0.18Al0.82N barrier layer could offer excellent charge carrier confinement and a high density of two-dimensional electron gas (2DEG) at the heterostructure interface, which is needed for GaN-based high electron mobility transistors (HEMTs) with enhanced performance. This work not only identifies the band alignment between Sc0.18Al0.82N and GaN for future novel ScAlN/III-nitride device applications but also high-lights the importance of considering the prevalent surface oxidation issue in the emerging ferroelectric nitride family.