Actual origin and precise control of asymmetrical hysteresis in an individual CH₃NH₃PbI₃ micro/nanowire for optical memory and logic operation

Runna Gou,Zhiyong Ouyang,Changsen Xu,Song He,Shouduan Cheng,Cencen Shi, Jie Zhao,Yanhe Xiao,Shuijin Lei,Baochang Cheng

Nanoscale Horizons（2022）

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摘要

The hysteresis of a single CH3NH3PbI3 micro/nanowire is recognized as a synergistic effect of two asymmetrical electrode interfaces, and the bipolar resistive switching can be effectively controlled by bias and illumination for nonvolatile optical memory and logic OR gate operation.

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Actual origin and precise control of asymmetrical hysteresis in an individual CH3NH3PbI3 micro/nanowire for optical memory and logic operation

Actual origin and precise control of asymmetrical hysteresis in an individual CH₃NH₃PbI₃ micro/nanowire for optical memory and logic operation