Оптимизация буферного диэлектрического слоя для создания малодефектных эпитаксиальных пленок топологического изолятора Pb-=SUB=-1-x-=/SUB=-Sn-=SUB=-x-=/SUB=-Te c x≥0.4

We have optimized the growth conditions of the buffer layer for further deposition of Pb1−x SnxTe (x ≥ 0.4), which has the properties of a crystalline topological insulator. To this end, a three-component heterostructure consisting of CaF2, BaF2, and Pb0.7Sn0.3Te : In layers was formed and optimized on the Si(111) surface. The surface morphology of this structure was studied depending on the temperature growth regimes and the optimal combination of growth parameters was selected from the point of view of smoothness and crystalline quality.