Depth Distribution of Radiation-Induced Defects under the Ion Irradiation of Silicon

— The defect-distribution density reaches its maximum at a depth that depends on the ion energy and mass. This depth decreases with increasing angle of incidence because of the multiple scattering of primary ions in the surface layers of the target. As the ion mass increases, the maximum defect density increases according to a power law. The asymmetry of the maximum in the depth distribution of defects is associated with an increase in the elastic energy loss during ion stopping and with a decrease in the ion-transmission coefficient with increasing layer depth.